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    Home/    Category/    FET, MOSFET/    ZXMN3A04DN8TC

    MOSFET 2N-CH 30V 6.5A 8SOIC ZXMN3A04DN8TC

    ZXMN3A04DN8TC image
    The pictures are for reference only
    Brand:
    Diodes
    Model:
    ZXMN3A04DN8TC
    Description:
    MOSFET 2N-CH 30V 6.5A 8SOIC
    Stock:
    29541
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    6.5A
  • Drain source voltage (Vdss)
    30V
  • FET Type
    2 N-channels(two)
  • FET function
    Logic level gate
  • Gate charge (Qg) at different Vgs (maximum)
    36.8nC @ 10V
  • Input capacitance at different Vds (Ciss) (maximum)
    1890pF @ 15V
  • On resistance (maximum) for different Ids and Vgs
    20 mΩ @ 12.6A,10V
  • Power - maximum
    1.81W
  • Vgs (th) (maximum) for different Ids
    1V @ 250µA(min)
  • packing
    TR
  • series
    -
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SOIC(0.154,3.90mm wide)
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    ZXMN3A04DN8TC（FET, MOSFET）ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory29541,Price reference "real-time change" China/Hongkong。 ZXMN3A04DN8TC package/specs, Download ZXMN3A04DN8TC、Datasheet。
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